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silicon pnp epitaxial transistor(pnp) silicon pnp epitaxial transistor(pnp)
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FHA1213 1 description & features c sot-89 1)low saturation voltage 2)high speed switching time pin assignment _f pin number _? pin name _? sot-89 function b 1 base c 2 collector e 3 emitter maximum ratings(t a =25 ) ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?O - lO? v ceo -50 vdc collector-base voltage ?O - O? v cbo -50 vdc emitter-base voltage lO - O? v ebo -5 vdc collector current ?O i c -2 adc base current ?O i b -0.4 adc collector power dissipation ?O? p c 500 mw junction and storage temperature Y??? t j t stg 150 -55 ~150 device marking FHA1213o=no(70~140) FHA1213y=ny(120~240) electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? test condition y?l min ? type ? max ? unit collector-emitter breakdown voltage ?O - lO? v (br)ceo i c =-10ma, -50 v collector-base breakdown voltage ?O - O? v (br)cbo i c =-100a -50 v emitter-base breakdown voltage lO - O? v (br)ebo i e =-100a -5.0 v collector cutoff current ?O? i cbo v cb =-50v i e =0 -100 na emitter cutoff current lO? i ebo v eb =-5v, i c =0 -100 na h fe1 v ce =-2v , i c =- 2.0a 20 dc current gain ? h fe2 v ce =-2v,i c = -0.5 a 70 240 collector-emitter saturation voltage ?O - lO?? v ce sat i c =-1.0a, i b =-50ma -0.5 v base-emitter saturation voltage O - lO?? v be(sat) i c =-1.0a, i b =-50ma -1.20 v transition frequency l f t v ce =-2v , i e =-0.5a , 120 mh z collect output capacitance ? c ob v cb =-10v , i e =0,f=1mhz 40 pf
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